BSM400D12P2G003

BSM400D12P2G003

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Manufacturer Part BSM400D12P2G003
Manufacturer ROHM Semiconductor
Description SILICON CARBIDE POWER MODULE. B
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union

Availability

InStock 4
UnitPrice $ 2142.86000

BSM400D12P2G003 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

BSM400D12P2G003 Specifications

Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:400A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:4V @ 85mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:38000pF @ 10V
Power - Max:2450W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:-
Package / Case:Module
Supplier Device Package:Module

Shopping Guide

Shipping Rate
Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

Shipping Methods
Shipping Methods

We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.


Payment
Payment

TT in advance (bank transfer), Western Union,PayPal. Customer is responsible for shipping fee, bank charges, duties and taxes.

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